features marking: 1 h igh diode semiconductor sot- 23 ?? ? symbol parameter value unit v collector-base voltage 60 v v ce o collector-emitter voltage 50 v v eb o emitter-base voltage 5 v i c co llector current 150 ma p c co llector power dissipation 200 mw r j a thermal resistance from junction to ambient 625 /w t j jun ction temperature 150 t st g storage temperature -55 +150 classification of h fe electrical characteristics (t =25 unless otherwise specified hf sot -23 plastic-encap sulate transistors transistor( np n ) e b c cbo C1815 high voltage and high cu rrent excellent h fe linearity low niose parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100ua, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 50 v collector cut-off current i ceo v ce =50v, i b =0 0.1 ua emitter cut-off current i ebo v eb = 5v, i c =0 0.1 ua dc current gain h fe v ce = 6v, i c = 2ma 130 400 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.25 v base-emitter saturation voltage v be (sat) i c =100ma, i b = 10ma 1 v transition frequency f t v ce =10v, i c = 1ma, f=30mhz 80 mhz collector cut-off current i c b o v c b = 6 0v, i e =0 0.1 ua emitter-base breakdown voltage v (br)ebo i e = 100ua, i c =0 5 v rank l h range 130-200 200-400
h l j k ' l r g h 6 h p l f r q g x f w r u 024681 0 0 1 2 3 4 5 0 300 600 900 1200 0.1 1 10 100 0.1 1 10 100 10 100 1000 0.1 1 10 100 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 1 10 100 10 100 0.1 1 10 100 10 100 1000 0.1 1 10 0.1 10 common emitter t a =25 16ua 14ua 12ua 10ua 8ua 6ua 4ua i b =2ua collector current i c (ma) collector-emitter voltage v ce (v) i c v ce common emitter v ce = 6v v be i c base-emmiter voltage v be (mv) collector current i c (ma) t a =2 5 t a =1 0 0 150 i c f t common emitter v ce =10v t a =25 collector current i c (ma) transition frequency f t (mhz) =10 i c v besat base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 2000 p c t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 150 500 150 20 150 i c h fe t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 6v 50 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib c ob c ib reverse voltage v (v) capacitance c (pf) 7 \ s l f d o & k d u d f w h u l v w l f v
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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